The silicon MOSFET from a transmission viewpoint
The silicon MOSFET from a transmission viewpoint
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DOI：
10.1006/spmi.1997.0563
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发表时间：
1998-01-01
影响因子：
3.1
通讯作者：
Lundstrom, MS
中科院分区：
文献类型：
--
作者：
Datta, S;Assad, F;Lundstrom, MS
兰道尔将电导视为一种传输过程的观点对基础传输物理学家产生了深远的影响，但相对而言，设备工程师并不欣赏。在本文中，我们提请注意新的见解和观点，传输的观点可以提供到深亚微米MOSFET的设计。首先，我们表明，有一个基本的限制，最小的接触电阻（类似于300 Ω-μ m的中等栅极偏置和类似于50 Ω-μ m的高栅极偏置下），没有接触技术的量可以克服，目前的设备接近这个基本的限制。其次，我们证明了饱和漏电流是由透射系数决定的，透射系数敏感地依赖于源的平均自由程内的电场。目前的装置具有类似于50%的透射系数，其可以通过增加源处的电场来增加。但这种改进受到量子力学反射增加的限制。(C)出版社：Academic Press Limited。
Landauer's view of conductance as a process of transmission has had a profound influence on basic transport physicists but is relatively unappreciated by device engineers. In this paper we draw attention to the new insights and perspectives that the transmission viewpoint can provide into the design of deep submicron MOSFETs. Firstly, we show that there is a fundamental limit to the minimum contact resistance (similar to 300 Omega-mu m under moderate gate bias and similar to 50 Omega-mu m under high gate bias) that no amount of contact technology can overcome and that present day devices are close to this fundamental limit. Secondly we show that the saturation drain current is determined by the transmission coefficient which depends sensitively on the electric field within a mean free path of the source. Present day devices have transmission coefficients similar to 50% which could be increased by increasing the electric field at the source. But the improvement is limited by the increase in quantum mechanical reflections. (C) 1998 Academic Press Limited.