On-Wafer Graphene Devices for THz Applications Using a High-Yield Fabrication Process
On-Wafer Graphene Devices for THz Applications Using a High-Yield Fabrication Process
复制标题
采用高产量制造工艺的太赫兹应用晶圆上石墨烯器件
DOI：
10.1109/mwsym.2019.8701093
复制
发表时间：
2019
期刊：
影响因子：
--
通讯作者：
Trichopoulos, Georgios C.
中科院分区：
文献类型：
--
作者：
Theofanopoulos, Panagiotis C.;Trichopoulos, Georgios C.
我们描述了一种新的制造过程，用于实现大阵列的亚波长石墨烯器件。通过所提出的工艺，我们现在可以在大的衬底面积（> 4 cm 2）上集成石墨烯层，并以高产量（> 90%）实现数千个器件。这样的系统的示例包括宽带THz相控阵列和可以用于THz成像和感测的超表面。由于石墨烯的易碎性质，目前的纳米制造工艺阻碍了大阵列的扩散。相反，我们在整个制造过程中使用钛牺牲层来保护脆弱的石墨烯。因此，我们最大限度地减少了石墨烯分层，并使大面积基板上的多个器件具有高产量。此外，我们在220-330 GHz频段提出了一系列的晶圆上的测量结果，验证了我们的制造工艺的鲁棒性。
We characterize a novel fabrication procedure for the implementation of large arrays of subwavelength graphene devices. With the proposed process, we can now integrate graphene layers on large substrate areas (> 4 cm2) and implement thousands of devices with high-yield (> 90 %). Examples of such systems include broadband THz phased arrays and metasurfaces that can be used in THz imaging and sensing. Current nano-fabrication processes hinder the proliferation of large arrays due to the fragile nature of graphene. Conversely, we use titanium sacrificial layers to protect the delicate graphene throughout the fabrication process. Thus, we minimize graphene delamination and enable multiple devices on large-area substrates with high-yield. In addition, we present a series of on-wafer measurement results in the 220-330 GHz band, verifying the robustness of our fabrication process.
基于曲线FDFD方法研究各向异性周期性结构中的非互易色散现象
影响因子：
4.3
作者：
P. Theofanopoulos;C. Lavranos;K. Zoiros;G. Trichopoulos;G. Granet;G. Kyriacou
通讯作者：
G. Kyriacou