Preparation of PZT Thick Films by an Interfacial Polymerization Method
Preparation of PZT Thick Films by an Interfacial Polymerization Method
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DOI：
10.1023/a:1020786102700
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发表时间：
2003
影响因子：
2.5
通讯作者：
T. Tsurumi;Shuichi Ozawa;S. Wada
中科院分区：
文献类型：
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作者：
T. Tsurumi;Shuichi Ozawa;S. Wada
采用溶胶-凝胶法和界面聚合技术制备了厚度为10 ~ 50 μm的Pb（Zr0.53Ti0.47）O3（PZT）薄膜。界面聚合过程是将醇盐前体溶液倾倒在容器中的水的表面上，以在两种不混溶液体之间的界面处形成凝胶膜。通过将PZT醇盐溶液、用Pb 5Ge 3 O 11（PG）包覆的PZT粉末和表面活性剂添加到己烷溶剂中来制备前驱体溶液。在界面处聚合之后，通过排出容器中的水将凝胶膜轻轻地放置在硅基底上。将含有PZT粉末的凝胶膜在950°C下烧结10分钟以获得结晶的PZT膜。PZT厚膜的反射极化为33.1 μC/cm 2。用Mach-Zehnder干涉仪测得的压电常数为225 pm/V，在0.2 ~ 3 kHz范围内与频率无关。
Pb(Zr0.53Ti0.47)O3(PZT) films of 10 to 50 μm in thickness were prepared by a new sol-gel process using an interfacial polymerization technique. The interfacial polymerization process is that an alkoxide precursor solution is poured on the surface of water in a container to form a gel film at the interface between the two immiscible liquids. The precursor solution was prepared by adding PZT alkoxide solution, PZT powders coated with Pb5Ge3O11(PG), and a surfactant into hexane solvent. After the polymerization at the interface, the gel films were gently placed on a silicon substrate by draining the water in the container. The gel films containing PZT powders were sintered at 950°C for 10 min to obtain crystallized PZT films. The remanent polarization of a PZT thick film was 33.1 μC/cm2. The piezoelectricd33constant measured with a Mach-Zehnder interferometer was 225 pm/V and was independent of frequency from 0.2 to 3 kHz.