Negative temperature dependence of electron multiplication in In0.53Ga0.47As
Negative temperature dependence of electron multiplication in In0.53Ga0.47As
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DOI：
10.1063/1.1555284
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发表时间：
2003-02
影响因子：
4
通讯作者：
M. Yee;W. Ng;J. David;P. Houston;C. Harrison
中科院分区：
文献类型：
--
作者：
M. Yee;W. Ng;J. David;P. Houston;C. Harrison
通过对一系列p-i-n二极管在20-400K温度范围内的光电倍增测量，确定了In0.53Ga0.47As中的电子倍增。在200千伏/厘米以上的电场下，In0.53Ga0.47As的电子倍增与温度呈负相关，而InP/In0.53Ga0.47As异质结双极晶体管的集电极倍增与温度呈正相关。结果还表明，在室温下，In0.53Ga0.47As的击穿电压与GaAs相当，且具有较弱的温度依赖性。
Electron multiplication in In0.53Ga0.47As has been determined from photomultiplication measurements over the temperature range of 20 to 400 K for a series of p–i–n diodes. A negative temperature dependence is observed in the electron multiplication of In0.53Ga0.47As at electric fields over 200 kV/cm, contrary to the positive temperature dependence of collector multiplication previously observed in InP/In0.53Ga0.47As heterojunction bipolar transistors. The results also showed that the breakdown voltage for In0.53Ga0.47As is comparable to GaAs at room temperature, and has a weaker temperature dependence.