Electromigration in aluminum/silicon/copper metallization due to the presence of a thin oxide layer
Electromigration in aluminum/silicon/copper metallization due to the presence of a thin oxide layer
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由于存在薄氧化层而导致铝/硅/铜金属化中的电迁移
DOI：
10.1007/s11664-997-0246-x
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发表时间：
1997
期刊：
影响因子：
--
通讯作者：
S. Chua
中科院分区：
文献类型：
--
作者：
K. A. Koh;S. Chua
研究了SiO_2薄层（50 nm）对Al/ 0.8wt.% Si/0.5wt.%铜金属化，钝化旋涂玻璃，磷硅酸盐玻璃和氮化硅作为互补金属氧化物半导体技术制造工艺的一部分进行了研究。据发现，形成沿着金属化线的边缘，而不是在晶界的三相点处形成的空隙。在相同的应力电流为1 × 106 A/cm 2时，较厚的金属化层（600 nm）显示出中值失效时间（MTF）的改善。（1.4倍），空隙尺寸较小（0.2至0.4 μm），而如果金属化厚度较薄（300 nm），MTF降低了0.6倍，形成了较大的空隙尺寸（0.3 ~ 1.0 μm）。
The effect of a thin layer of SiO2(50 nm) on the electromigration behavior of Al/ 0.8wt.%Si/0.5wt.%Cu metallization, passivated by spin-on-glass, phosphorus silicate glass and silicon nitride as part of the complementary metal oxide semiconductor technology fabrication process was studied. It is found that voids were formed along the edge of the metallization line as opposed to formation at triple point of grain boundaries. At the same stress current of 1 × 106A/cm2, thicker metallization layer (600 nm) showed an improvement in median time to failure (MTF) (1.4 times) with smaller void size (0.2 to 0.4 μm) over one without an underlying oxide, whereas if the metallization thickness is thin (300 nm), the MTF is degraded (0.6 times) with larger void size formed (0.3 to 1.0 μm).