Double-gate tunnel FET with high-κ gate dielectric
Double-gate tunnel FET with high-κ gate dielectric
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DOI：
10.1109/ted.2007.899389
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发表时间：
2007-07-01
影响因子：
3.1
通讯作者：
Mihai Ionescu, Adrian
中科院分区：
文献类型：
--
作者：
Boucart, Kathy;Mihai Ionescu, Adrian
在本文中，我们提出并验证了一种双栅隧道场效应晶体管（DG tunnel FET）的新设计，与使用SiO2栅极介质的单栅器件相比，仿真结果显示了显著的改进。首次使用高卡帕栅极介电介质的DG隧道场效应管器件，采用实际设计参数进行了探索，在栅极电压为1.8 V时，其导通电流高达0.23 mA，关断电流小于1 fA（忽略栅极泄漏），平均亚阈值摆幅改善为57 mV/dec，最小点斜率为11 mV/dec。研究了隧道场效应管电流的二维特性，证明了电流不局限于栅极介电表面的沟道。与传统的MOSFET相比，当温度变化时，使用高kappa栅极介质的隧道场效应管的阈值电压位移比使用SiO2的隧道场效应管小，而固定V-g值的亚阈值斜率几乎保持不变。此外，对于栅极长度为50 nm的模拟器件，显示了超过2 × 10（11）的I-on/I-off比，这表明隧道场效应管是实现比itrs更好的低备用功率开关性能的有希望的候选人。
In this paper, we propose and validate a novel design for a double-gate tunnel field-effect transistor (DG Tunnel FET), for which the simulations show significant improvements compared with single-gate devices using an SiO2 gate dielectric. For the first time, DG Tunnel FET devices, which are using a high-kappa gate dielectric, are explored using realistic design parameters, showing an ON-current as high as 0.23 mA for a gate voltage of 1.8 V, an OFF-current of less than 1 fA (neglecting gate leakage), an improved average subthreshold swing of 57 mV/dec, and a minimum point slope of 11 mV/dec. The 2-D nature of Tunnel FET current flow is studied, demonstrating that the current is not confined to a channel at the gate-dielectric surface. When varying temperature, Tunnel FETs with a high-kappa gate dielectric have a smaller threshold voltage shift than those Using SiO2, while the subthreshold slope for fixed values of V-g remains nearly unchanged, in contrast with the traditional MOSFET. Moreover, an I-on/I-off ratio of more than 2 x 10(11) is shown for simulated devices with a gate length (over the intrinsic region) of 50 nm, which indicates that the Tunnel FET is a promising candidate to achieve better-than-ITRS low-standby-power switch performance.