Electrical, Thermal and Magnetic Properties of CeNiIn4
Electrical, Thermal and Magnetic Properties of CeNiIn4
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CeNiIn4 的电学、热学和磁学性质
DOI：
10.1143/jpsj.73.664
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发表时间：
2004
影响因子：
1.7
通讯作者：
Y. Ōnuki
中科院分区：
文献类型：
--
作者：
H. Shishido;Noriko Nakamura;T. Ueda;R. Asai;A. Galatanu;E. Yamamoto;Y. Haga;T. Takeuchi;Y. Narumi;Tatsuo C. Kobayashi;K. Kindo;K. Sugiyama;T. Namiki;Y. Aoki;H. Sato;Y. Ōnuki
我们用助熔剂法成功地生长出了具有正交晶系结构的CeNiIn 4单晶。CeNiIn 4在1.4K以下是反铁磁有序的，在0.75K以下磁结构发生连续变化.通过比热和磁化强度的测量，形成了磁相图。测得其电子比热系数为80 mJ/K2·mol。实验结果表明，CeNiIn 4是一种常见的4f局域化合物.
We have succeeded in growing a single crystal of CeNiIn 4 with the orthorhombic crystal structure by the In-flux method. CeNiIn 4 is found to order antiferromagnetically below 1.4 K, with a successive change of the magnetic structure below 0.75 K. The magnetic phase diagram was formed by the specific heat and magnetization measurements. The electronic specific heat coefficient is determined as 80 mJ/K 2 ·mol. From these experimental results it is concluded that CeNiIn 4 is a usual 4 f -localized compound.
影响因子：
1.7
作者：
T. Mizushima;Y. Isikawa;A. Maeda;K. Oyabe;K. Mori;Kiyoo Sato;K. Kamigaki
通讯作者：
T. Mizushima;Y. Isikawa;A. Maeda;K. Oyabe;K. Mori;Kiyoo Sato;K. Kamigaki