Fabrication and performance of N-doped ZnO UV photoconductive detector
Fabrication and performance of N-doped ZnO UV photoconductive detector
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DOI：
10.1016/j.jallcom.2012.01.118
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发表时间：
2012-05
影响因子：
6.2
通讯作者：
S. Shinde;K. Rajpure
中科院分区：
文献类型：
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作者：
S. Shinde;K. Rajpure
本文报道了一种基于n掺杂ZnO薄膜的紫外（UV）光电探测器的制备和表征。将掺氮量为10at%的N掺杂ZnO薄膜喷镀在氧化铝基体上。以Al为接触金属，制备了具有金属-半导体-金属（MSM）结构的n掺杂ZnO薄膜光导紫外探测器。研究了探测器在黑暗和光照条件下I-V特性的依赖关系以及探测器的光谱和瞬态光响应。正向偏置下的线性电流-电压（I-V）特性表现为欧姆金属-半导体接触。观察到紫外光导效应显示出快速响应，开关紫外光照明。带负电荷的氧离子对光生空穴的中和作用对n掺杂ZnO多晶薄膜的光导特性起着关键作用。
We report study on the fabrication and characterization of an ultraviolet (UV) photodetectors based on N-doped ZnO films. The N-doped ZnO films with 10at% N doping are spray deposited on to alumina substrates. The photoconductive UV detector based on N-doped ZnO thin films, having a metal–semiconductor–metal (MSM) configuration are fabricated using Al as a contact metal. The dependence of I–V characteristic under dark and illumination, spectral and transient photoresponse of the detector are investigated. The linear current–voltage (I–V) characteristics under forward bias exhibit ohmic metal–semiconductor contact. The UV photoconductive effect is observed showing fast response with switching on/off UV light illumination. The neutralization of photogenerated holes by negatively charged oxygen ion plays a key role in the photoconductive characteristics of N-doped ZnO polycrystalline films.