Surface Potential Measurement of a Silicon Fast Recovery Diode under Applied Bias Voltages by Kelvin Probe Force Microscopy
Surface Potential Measurement of a Silicon Fast Recovery Diode under Applied Bias Voltages by Kelvin Probe Force Microscopy
复制标题
通过开尔文探针力显微镜测量施加偏置电压下的硅快恢复二极管的表面电位
DOI:
--
复制
发表时间:
2018
期刊:
影响因子:
--
通讯作者:
H. Yamamoto and F. Iwata
中科院分区:
文献类型:
--
作者:
T. Uruma;N. Satoh;H. Yamamoto and F. Iwata