Stress and structural studies of ZnO thin films on polymer substrate under different RF powered conditions
Stress and structural studies of ZnO thin films on polymer substrate under different RF powered conditions
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不同射频功率条件下聚合物基底上 ZnO 薄膜的应力和结构研究
DOI：
10.1016/j.matlet.2009.08.027
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发表时间：
2009-12-15
影响因子：
3
通讯作者：
Cheng, Chuan-fu
中科院分区：
文献类型：
--
作者：
Liu, Yun-yan;Zang, Yong-li;Cheng, Chuan-fu
采用射频磁控溅射法在柔性聚四氟乙烯衬底上制备了ZnO薄膜。通过XRD分析，揭示了薄膜的结构和残余应力。结果表明，随着射频功率的增加，薄膜中的应力性质发生了变化，薄膜的晶粒尺寸也发生了变化。这表明了通过增加RF功率来应力松弛的可能性。考虑到薄膜的（002）取向和机械应力，我们认为在200 W的射频功率下沉积1 h的ZnO薄膜是最佳的。(C)2009爱思唯尔有限公司版权所有。
The ZnO films are deposited on flexible substrate Teflon by radio frequency (RF) magnetron sputtering. The structure and residual stress of the films are revealed by XRD analysis. We find that the increase of RF power results in the change in the nature of stress and the difference of the grain size in the ZnO films on Teflon substrate. This indicates the possibility of the stress relaxation by increasing the RF power. Considering the (002) orientation and the mechanical stress, we suggest that the ZnO film deposited at RF power of 200 W for 1 h is optimal. (C) 2009 Elsevier B.V. All rights reserved.