Capillary force lithography:: Fabrication of functional polymer templates as versatile tools for nanolithography
Capillary force lithography:: Fabrication of functional polymer templates as versatile tools for nanolithography
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DOI：
10.1002/adfm.200500629
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发表时间：
2006-08-04
影响因子：
19
通讯作者：
Reinhoudt, David N.
中科院分区：
文献类型：
--
作者：
Bruinink, Christiaan M.;Peter, Maria;Reinhoudt, David N.
从纳米印迹光刻(NIL)和金属湿法刻蚀两个方面探讨了毛细力光刻(CFL)制备高分辨率聚合物模板的实现方法。几种不同的热塑性和紫外光固化聚合物和基材类型被整合到常规CFL程序中，以满足这两种应用的不同要求。原子力显微镜(AFM)检测了用于聚合物中印迹的紫外光固化模板的机械稳定性，以及它们的抗粘连性能，它们非常适合在零接触中应用。优化了紫外光固化聚合物的固化条件，以获得高稳定性的聚合物模板。随后在丙酮中剥离，在硅上制备了横向分辨率为150 nm的金图案。利用硅上金层上的热塑性聚合物模板作为刻蚀掩模，制作了横向分辨率为100 nm的类似图案。X射线光电子能谱(XPS)和原子力显微镜摩擦分析证明了这些聚合物模板在CFL过程中印章残留物的转移。对于聚甲基丙烯酸甲酯(PMMA)，发现在随后的02反应离子刻蚀(RIE)处理中，大量含硅残留物的存在会损害所得模板的加工性。聚苯乙烯(PS)的硅污染程度最高可减少六分之一。在这个水平上，PS刻蚀掩模的刻蚀性能不会像PMMA那样受到影响。通过对金的过度蚀刻实现了所得到的金属图案的横向尺寸相对于PS蚀刻掩模的尺寸的几个因素的精确缩小。总体而言，本文的结果证明了CFL模板作为高分辨率软光刻工具的潜力。
The implementation of high-resolution polymer templates fabricated by capillary force lithography (CFL) is explored both in nanoirnprint lithography (NIL) and in the wet-etching of metals. Several different thermoplastic and UV-curable polymers and types of substrates are incorporated into the general CFL procedure to meet the diverging requirements of these two applications. The mechanical stability of UV-curable templates for imprinting in polymers, as examined by atomic force microscopy (AFM), and their anti-adhesive properties are excellent for application in NIL. The conditions for curing the UV-curable polymer are optimized in order to obtain high-stability polymer templates. Gold patterns on silicon with a lateral resolution of 150 nm are fabricated by subsequent lift-off in acetone. Similar patterns with a lateral resolution of 100 nm are fabricated using templates of thermoplastic polymers on gold layers on silicon as an etch mask. The transfer of stamp residues during CFL with these polymer templates is proven by X-ray photoelectron spectroscopy (XPS) and AFM friction analysis. For poly(methylmethacrylate) (PMMA), the presence of large amounts of silicon-containing residues is found to compromise the processability of the resulting template in subsequent 02 reactive-ion etching (RIE) treatment. The extent of silicon contamination is up to six times less for polystyrene (PS). At this level, the etch performance of the PS etch mask is not affected, as was the case for PMMA. Accurate downscaling of the lateral dimensions of the resulting metal patterns by several factors with respect to the dimensions of the PS etch mask is achieved by over-etching of the gold. Overall, the results in this paper demonstrate the potential of CFL templates as tools for high-resolution soft lithography.