InAs/GaAs Quantum Dot Lasers on Silicon-on-Insulator Substrates by Metal-Stripe Wafer Bonding
InAs/GaAs Quantum Dot Lasers on Silicon-on-Insulator Substrates by Metal-Stripe Wafer Bonding
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DOI：
10.1109/lpt.2015.2398465
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发表时间：
2015-04
影响因子：
2.6
通讯作者：
Yuan-Hsuan Jhang;K. Tanabe;S. Iwamoto;Y. Arakawa
中科院分区：
文献类型：
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作者：
Yuan-Hsuan Jhang;K. Tanabe;S. Iwamoto;Y. Arakawa
具有Si肋结构的绝缘体上硅衬底上的InAs/GaAs量子点(QD)激光器是通过金属条晶圆键合制造的，其中金属条不仅充当键合层，而且还充当电极。我们的法布里-珀罗激光器的大面积激光器的阈值电流密度为 520 A·cm-2，脊形激光器的阈值电流为 110 mA。粘合激光器在室温下表现出 1.3 μm 的 InAs QD 基态激光。
InAs/GaAs quantum dot (QD) lasers on silicon-on-insulator substrates with Si rib structures are fabricated by metal-stripe wafer bonding, where the metal strips work not only as the bonding layer but also as electrodes. Our Fabry-Pérot lasers operate with a threshold current density of 520 A · cm-2 for the broad-area laser, and a threshold current of 110 mA for the ridge laser. The bonded lasers exhibit an InAs QD ground-state lasing at 1.3 μm at room temperature.