Hall Effect of Quasi-Hole Gas in Organic Single-Crystal Transistors
Hall Effect of Quasi-Hole Gas in Organic Single-Crystal Transistors
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DOI：
10.1143/jjap.44.l1393
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发表时间：
2005-11
影响因子：
1.5
通讯作者：
J. Takeya;K. Tsukagoshi;Y. Aoyagi;T. Takenobu;Y. Iwasa
中科院分区：
文献类型：
--
作者：
J. Takeya;K. Tsukagoshi;Y. Aoyagi;T. Takenobu;Y. Iwasa
霍尔效应是在有机场效应晶体管中检测到的，使用适当形状的红荧烯（C42 H28）单晶。结果表明，霍尔系数的倒数为正，接近于空穴积累时的电场感应电荷量。正常霍尔效应的存在意味着表面电荷的电磁特性不是跳跃载流子，而是类似于二维空穴-气体系统。
Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C42H28) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced charge upon the hole accumulation. The presence of the normal Hall effect means that the electromagnetic character of the surface charge is not of hopping carriers but resembles that of a two-dimensional hole-gas system.