Room-temperature operation of a memory-effect AlGaAs/GaAs heterojunction field-effect transistor with self-assembled InAs nanodots
Room-temperature operation of a memory-effect AlGaAs/GaAs heterojunction field-effect transistor with self-assembled InAs nanodots
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DOI：
10.1063/1.126065
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发表时间：
2000-03
影响因子：
4
通讯作者：
K. Koike;K. Saitoh;Shu-wei Li;S. Sasa;M. Inoue;M. Yano
中科院分区：
文献类型：
--
作者：
K. Koike;K. Saitoh;Shu-wei Li;S. Sasa;M. Inoue;M. Yano
这封信描述了AlGaAs/GaAs异质结场效应晶体管的记忆效应，其中包含InAs纳米点的势垒层。该器件经历阈值栅极电压的偏移，作为在纳米点中捕获的电子的量的函数。这些被俘获的电子可以通过施加正的栅极电压来注入，并且可以通过在负的栅极偏压下的可见光照射来擦除。虽然阈值栅极电压的偏移随存储器编程操作之后的时间而波动，但是即使在室温下100小时之后，也保留了相当大的一部分偏移。
This letter describes the memory effect of an AlGaAs/GaAs heterojunction field-effect transistor that contains InAs nanodots in the barrier layer. The device experiences a shift of threshold gate voltage, as a function of the amount of the electrons trapped in the nanodots. These trapped electrons can be injected by applying a positive gate voltage and be erased by a visible light illumination at negative gate bias. Although the shift of the threshold gate voltage volatilizes with the time after the memory programing operation, a considerable part of the shift is retained even after 100 h at room temperature.