Study on the electrical conduction mechanism of bipolar resistive switching TiO2 thin films using impedance spectroscopy
Study on the electrical conduction mechanism of bipolar resistive switching TiO2 thin films using impedance spectroscopy
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DOI：
10.1063/1.3400222
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发表时间：
2010-04-12
影响因子：
4
通讯作者：
Hwang, Cheol Seong
中科院分区：
文献类型：
--
作者：
Lee, Min Hwan;Kim, Kyung Min;Hwang, Cheol Seong
通过交流阻抗谱和直流电流-电压测量研究了电阻开关TiO 2薄膜在其双极高阻态下的导电机制。双极开关，这可以从一个单极的高电阻状态，是由于调制的肖特基势垒高度在膜电极界面和电子的能量状态的膜。阻抗数据的数值拟合揭示了两个不同的RC域串联，这是由于一个界面势垒（激活能类似于0.1 eV）和非导电层（激活能类似于0.5 eV），分别。
The electrical conduction mechanism within a resistive switching TiO2 film in its bipolar high resistance state was examined by ac impedance spectroscopy and dc current-voltage measurements. Bipolar switching, which can be initiated from a unipolar high resistance state, was attributed to both modulation of the Schottky barrier height at the film-electrode interface and the electronic energy state in the film. Numerical fittings of the impedance data revealed two distinct RC domains in series, which were attributed to an interfacial barrier (activation energy similar to 0.1 eV) and a nonconducting layer (activation energy similar to 0.5 eV), respectively.