A Physics-Based Three-Dimensional Analytical Model for RDF-Induced Threshold Voltage Variations
A Physics-Based Three-Dimensional Analytical Model for RDF-Induced Threshold Voltage Variations
复制标题
RDF 引起的阈值电压变化的基于物理的三维分析模型
DOI：
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发表时间：
2011
影响因子：
3.1
通讯作者：
K. Roy
中科院分区：
文献类型：
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作者：
G. Panagopoulos;K. Roy
在本文中，提出了一个3-D的分析模型来捕捉阈值电压，表面电位，和电场的变化引起的随机掺杂波动的沟道区的金属氧化物半导体场效应晶体管。3D模型分别处理每种掺杂剂的影响，并基于物理学的基本定律。所提出的方法能够确定晶体管阈值电压的变化，具有非常低的计算成本和高精度。使用开发的模型，我们进行了统计分析，模拟超过10万个晶体管样品。有趣的是，结果表明，虽然大沟道晶体管的阈值电压分布是高斯分布，但对于缩放晶体管，它是非高斯分布。此外，所提出的模型预测已知的公式，这是证明了1-D分析和大型晶体管，简单地通过设置适当的晶体管的大小。因此，该模型是大晶体管理论到纳米级器件的逻辑延伸。
In this paper, a 3-D analytical model is proposed to capture the threshold voltage, surface potential, and electric field variations induced by random dopant fluctuations in the channel region of metal-oxide-semiconductor field-effect transistors. The 3-D model treats the effect of each dopant separately and is based on fundamental laws of physics. The proposed approach enables determination of transistor threshold voltage variations with both very low computational cost and high accuracy. Using the developed model, we performed statistical analysis, simulating more than 100 000 transistor samples. Interestingly, the results showed that, although the distribution of the threshold voltage for large-channel transistors is Gaussian, for scaled transistors, it is non-Gaussian. Furthermore, the proposed model predicts known formulas, which are proven for 1-D analysis and large transistors, simply by setting the appropriate transistor size. As a consequence, this model is a logical extension of the theory of large transistors to nanoscaled devices.