Enhancement of post-annealing stability in Co/Ni multilayers with perpendicular magnetic anisotropy by Au insertion layers
Enhancement of post-annealing stability in Co/Ni multilayers with perpendicular magnetic anisotropy by Au insertion layers
复制标题
DOI：
10.1007/s12598-016-0782-8
复制
发表时间：
2016-08
期刊：
影响因子：
8.8
通讯作者：
Yi Cao;Minghua Li;Kang Yang;Xi Chen;Guang Yang;Qianqian Liu;Guang-Hua Yu
中科院分区：
文献类型：
--
作者：
Yi Cao;Minghua Li;Kang Yang;Xi Chen;Guang Yang;Qianqian Liu;Guang-Hua Yu
在具有垂直磁各向异性（PMA）的Co/Ni多层膜中，通过在Ni/Co界面上插入Au层，提高了退火后的稳定性。350 °C退火后，Ta（3）/Pt（2）/[Co（0.3）/Ni（0.6）/Au（0.3）] ×3/Co（0.3）/Pt（1）/Ta（3）（单位：nm）的有效磁各向异性密度（Keff）保持在0.48 × 105 J·m-3。扫描透射电子显微镜-高角环形暗场（STEM-HAADF）分析表明，Ni层和Co层之间的Au插入层阻碍了Ni层和Co层之间的扩散，这是多层膜退火后稳定性增强的原因。在这项工作中，还研究了与Pt插入层的多层膜作为参考样品。与Pt层插入的Co/Ni多层膜相比，Au层插入的Co/Ni多层膜很少引入界面PMA，因此在提高PMA Co/Ni多层膜退火后的稳定性方面具有竞争力。
AbstractEnhancement of post-annealing stability in Co/Ni multilayers with perpendicular magnetic anisotropy (PMA) was obtained by inserting Au layers into Ni/Co interfaces. After annealing at 350 °C, the effective magnetic anisotropy density (Keff) for Ta(3)/Pt(2)/[Co(0.3)/Ni(0.6)/Au(0.3)] ×3/Co(0.3)/Pt(1)/Ta(3) (in nm) keeps at 0.48 × 105J·m−3. Scanning transmission electron microscopy-high-angle annular dark field (STEM-HAADF) analysis shows that the diffusion between Ni and Co layers is obstructed by the Au insertion layers among them, which is responsible for the post-annealing stability enhancement of the multilayers. Multilayers with Pt insertion layers were also investigated as reference samples in this work. Compared with Pt-layer-inserted Co/Ni multilayers, the Au insertion layers are found to bring seldom interfacial PMA to the multilayers, making it competitive in being employed to enhance the post-annealing stability of PMA Co/Ni multilayers which are used for magnetic random access memory devices (MRAM).