Optical Gain Calculation of Wurtzite GaN/AlGaN Quantum Well Laser
Optical Gain Calculation of Wurtzite GaN/AlGaN Quantum Well Laser
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纤锌矿GaN/AlGaN量子阱激光器的光增益计算
DOI：
10.1143/jjap.34.l821
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发表时间：
1995
影响因子：
1.5
通讯作者：
T. Uenoyama
中科院分区：
文献类型：
--
作者：
S. Kamiyama;K. Ohnaka;Masakatsu Suzuki;T. Uenoyama
首次利用从头计算的物理参数对纤锌矿GaN/Al0.2Ga0.8N量子阱激光器的光学增益特性进行了理论分析。纤锌矿GaN的价带表现出很强的非抛物性，与传统的闪锌矿晶体相比，空穴态密度明显更大。这种价带特征导致 50 Å 厚的 GaN 量子阱中具有 7.5×1018 cm-3 的高透明度卡蒂埃密度。这一结果预示着纤锌矿GaN/AlGaN量子阱激光器的阈值电流高于传统的闪锌矿晶体激光器。
Optical gain properties of wurtzite GaN/Al0.2Ga0.8N quantum well lasers are theoretically analyzed using physical parameters from ab initio calculations for the first time. The valence band of wurtzite GaN exhibits strong non-paraboticity, and the hole density of states is significantly large in comparison with the conventional zincblende crystals. This valence band feature causes high transparency cartier density of 7.5×1018 cm-3 in the 50 Å thick GaN quantum well. This result predicts that the threshold current of wurtzite GaN/AlGaN quantum well laser is higher than the conventional lasers with zincblende crystals.