Dynamics of screening in photodoped Mott insulators
Dynamics of screening in photodoped Mott insulators
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DOI：
10.1103/physrevb.92.195123
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发表时间：
2015-11-12
影响因子：
3.7
通讯作者：
Werner, Philipp
中科院分区：
文献类型：
--
作者：
Golez, Denis;Eckstein, Martin;Werner, Philipp
我们使用扩展的动态平均场理论结合非交叉近似杂质求解器的非平衡实现研究光激发莫特绝缘体中的动态屏蔽效应。双光子和空穴的插入增加了低能屏蔽模，并导致莫特能隙的减小。耦合到低能量玻色子模式进一步打开新的弛豫通道，显着加快热化过程。我们还研究了光掺杂载流子的能量分布对屏蔽的影响。
We use a nonequilibrium implementation of extended dynamical mean-field theory in combination with a noncrossing approximation impurity solver to study the effect of dynamical screening in photoexcited Mott insulators. The insertion of doublons and holes adds low-energy screening modes and leads to a reduction of the Mott gap. The coupling to low-energy bosonic modes furthermore opens new relaxation channels and significantly speeds up the thermalization process. We also investigate the effect of the energy distribution of the photo doped carriers on the screening.