Growth and Performance of Yttrium Oxide as an Ideal High-κ Gate Dielectric for Carbon-Based Electronics
Growth and Performance of Yttrium Oxide as an Ideal High-κ Gate Dielectric for Carbon-Based Electronics
复制标题
DOI：
10.1021/nl100022u
复制
发表时间：
2010-06-01
期刊：
影响因子：
10.8
通讯作者：
Peng, Lian-Mao
中科院分区：
文献类型：
--
作者：
Wang, Zhenxing;Xu, Huilong;Peng, Lian-Mao
通过简单廉价的工艺，研究了高质量氧化钇（Y2 O3）作为碳基电子器件理想的高kappa栅介质。利用钇在sp（2）碳骨架上的良好润湿性，在碳纳米管（CNT）和石墨烯表面直接生长了尺寸约为几nm的均匀Y2 O3层，而不需要使用非共价功能化层，也不需要引入大的结构畸变和损伤。采用5 nm Y2 O3层作为其顶栅电介质的顶栅CNT场效应晶体管（FET）显示出优异的器件特性，包括60 mV/decade的理想亚阈值摆幅（达到室温下理想PET的理论极限）。高电学质量的Y2 O3介电层也被集成到石墨烯FET中作为其顶栅电介质，电容高达1200 nF/cm（2），与背栅对应物相比，栅极效率和状态稳定性提高了100 Limes以上。
High-quality yttrium oxide (Y2O3) is investigated as an ideal high-kappa gate dielectric for carbon-based electronics through a simple and cheap process. Utilizing the excellent wetting behavior of yttrium on sp(2) carbon framework, ultrathin (about few nm) and uniform Y2O3 layers have been directly grown on the surfaces of carbon nanotube (CNT) and graphene without using noncovalent functionalization layers or introducing large structural distortion and damage. A top-gate CNT field-effect transistor (FET) adopting 5 nm Y2O3 layer as its top-gate dielectric shows excellent device characteristics, including an ideal subthreshold swing of 60 mV/decade (up to the theoretical limit of an ideal PET at room temperature). The high electrical quality Y2O3 dielectric layer has also been integrated into a graphene FET as its top-gate dielectric with a capacitance of up to 1200 nF/cm(2), showing an improvement on the gate efficiency and on state transconductance of over 100 Limes when compared with that of its back-gate counterpart.