Fabrication of thin films with highly porous microstructures
Fabrication of thin films with highly porous microstructures
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DOI：
10.1116/1.579579
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发表时间：
1995-05
期刊：
影响因子：
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通讯作者：
K. Robbie;L. Friedrich;S. Dew;T. Smy;M. Brett
中科院分区：
文献类型：
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作者：
K. Robbie;L. Friedrich;S. Dew;T. Smy;M. Brett
已开发出一种用于沉积密度低至15%体积的高度多孔绝缘体或金属膜的蒸发工艺。该工艺利用多个蒸发源或衬底移动来提供对称但非常倾斜（约80%）的通量入射到衬底上。极端的自遮蔽产生了由隔离的且均匀间隔的柱组成的垂直柱状微结构，包括在许多绝缘体膜中的独特的锯齿形结构。膜的特征通常是各向异性的，导致沿着膜表面平面中的垂直轴的电导率差异多达沿着两个因子。观察到各向异性生长的方向随着入射通量角增加到非常倾斜（超过约80°）而切换取向。结合弹道沉积和最小化的化学势的线段模拟器已被用来帮助这些薄膜的生长机制的理解，并优化蒸发过程。
An evaporation process has been developed for depositing highly porous insulator or metal films with densities as low as 15% of bulk. The process utilizes either multiple evaporation sources or substrate movement to provide a symmetrical but very oblique (≳80%) flux incident on the substrate. Extreme self‐shadowing produced a vertical columnar microstructure consisting of isolated and evenly spaced columns including a unique zigzag structure in a number of insulator films. Features of the film are often anisotropic, leading to conductivity differences of as much as a factor of two along perpendicular axes in the plane of the film surface. The direction of anisotropic growth was observed to switch orientation as the incident flux angle was increased to very oblique, beyond approximately 80°. A line segment simulator incorporating ballistic deposition and minimization of chemical potential has been used to aid in the understanding of the growth mechanisms of these films and to optimize the evaporation proce...