1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C
1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C
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DOI：
10.1063/1.1476708
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发表时间：
2002-05-06
影响因子：
4
通讯作者：
Deppe, DG
中科院分区：
文献类型：
--
作者：
Shchekin, OB;Deppe, DG
研究了p型调制掺杂对1.3 μ m InAs量子点激光器增益特性的影响。光学增益的提高导致激光阈值的特征温度非常高，在0到80°c的温度范围内达到161 K。1.3在167℃的温度下可获得基态激光。(C) 2002年美国物理研究所。
Data are presented on the influence of p-type modulation doping on the gain characteristics of 1.3 mum InAs quantum dot lasers. The improvement in optical gain leads to very high characteristic temperatures for the lasing threshold that reach 161 K in the temperature range between 0 and 80 degreesC. 1.3 mum ground state lasing is obtained up to a temperature of 167 degreesC. (C) 2002 American Institute of Physics.