In situ study the dependence of electrochemical migration of tin on chloride
In situ study the dependence of electrochemical migration of tin on chloride
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DOI：
10.1016/j.elecom.2012.11.010
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发表时间：
2013-02
影响因子：
5.4
通讯作者：
X. Zhong;Guoan Zhang;Y. Qiu;Zhenyu Chen;Wenxin Zou;Xingpeng Guo
中科院分区：
文献类型：
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作者：
X. Zhong;Guoan Zhang;Y. Qiu;Zhenyu Chen;Wenxin Zou;Xingpeng Guo
采用原位电化学和光学技术研究了氯化物对锡电化学迁移的影响。首次发现了一个有趣的现象，即锡枝晶不仅在低氯化物浓度的电解质层中生长，而且在高氯化物浓度的电解质层中也生长，尽管通常认为通过ECM的锡枝晶生长在高氯化物浓度的溶液中是不可用的。已提出的机制来解释电解质层中的锡与各种氯化物浓度的ECM。
The dependence of electrochemical migration (ECM) of tin on chloride was investigated using in situ electrochemical and optical techniques. An interesting phenomenon is first found that tin dendrite grows not only in the electrolyte layer with low chloride concentration but also in the electrolyte layer with high chloride concentration, although it is generally suggested that the growth of tin dendrite through ECM is not available in solution with high chloride concentration. Mechanisms have been proposed to explain the ECM of tin in the electrolyte layer with various chloride concentrations.