Effect of boron dopant on the photoconductivity of microcrystalline hydrogenated silicon films
Effect of boron dopant on the photoconductivity of microcrystalline hydrogenated silicon films
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硼掺杂剂对微晶氢化硅薄膜光电导率的影响
DOI：
10.1134/1.1434510
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发表时间：
2002
期刊：
影响因子：
0.7
通讯作者：
P. Forsh
中科院分区：
文献类型：
--
作者：
A. Kazanskii;H. Mell;E. Terukov;P. Forsh
研究了硼掺杂对微晶氢化硅薄膜光电导和光响应时间温度特性的影响。测量是在130-450 K的温度范围内用1.4-eV的光子照射下进行的。它是建立的稳态光电导和光响应时间的增加与掺杂水平。本文提出了一个考虑微晶硅混合相结构的非平衡载流子复合模型。该模型令人满意地解释了所获得的结果。
The effect of boron dopant of microcrystalline hydrogenated silicon films on the temperature dependence of photoconductivity and photoresponse time was studied. The measurements were carried out in the temperature range of 130–450 K under irradiation with 1.4-eV photons. It is established that the steady-state photoconductivity and photoresponse time increase with doping level. A model of nonequilibrium charge carrier recombination, which takes into account the mixed-phase structure of microcrystalline silicon, is suggested. The model satisfactory explains the results obtained.