The study of the defect removal etching of black silicon for diamond wire sawn multi-crystalline silicon solar cells
The study of the defect removal etching of black silicon for diamond wire sawn multi-crystalline silicon solar cells
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金刚线锯多晶硅太阳能电池黑硅缺陷去除刻蚀研究
DOI：
10.1016/j.solener.2018.04.066
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发表时间：
2018
期刊：
影响因子：
6.7
通讯作者：
Chen Bihua
中科院分区：
文献类型：
--
作者：
Su Guoyu;Dai Xiaowan;Tao Ke;Sun Hengchao;Jia Rui;Jin Zhi;Liu Xinyu;Liu Hongzhi;Liu Shouqiang;Xu Chun;Cao Yujia;Zhao Yan;Qu Hui;Liu Bin;Chen Bihua
采用金属辅助化学腐蚀（MACE）技术在15.6 cm × 15.6 cm金刚石线锯（DWS）多晶硅（mc-Si）晶片上制备了低反射率的纳米黑硅。随后，进行不同时间的缺陷去除蚀刻（DRE）工艺以在晶片表面上形成具有不同尺寸的纳米丘。实验结果表明，DRE工艺会影响纳米丘的尺寸、硅片的反射率和复合速度。结果表明，对于黑色硅片，随着DRE时间的增加，反射率增大，钝化效果变好。反射率和钝化效果可以通过适当的DRE工艺进行调整。通过这种方法，我们成功地制备了DWS mc-Si太阳能电池（15.6 cm × 15.6 cm），其最高转换效率为19.07%，与常规酸织构制备的DWS mc-Si太阳能电池（15.6 cm × 15.6 cm）相比，效率提高了0.6%。
We produced low-reflectivity nanostructured black silicon by metal-assisted chemical etching (MACE) technology on the 15.6 cm × 15.6 cm diamond wire sawn (DWS) multi-crystalline silicon (mc-Si) wafers. Subsequently, defect removal etching (DRE) processes were carried out for various times to form nanohills with different sizes on the wafer surface. The experimental results indicated that the DRE process could influence the size of the nanohills, reflectivity and the recombination velocities of the silicon wafers. It was found that for the black silicon wafer, with the increasing of DRE time, the reflectivity became larger and the passivation effect became better. The reflectivity and the passivation effect can be adjusted by suitable DRE processes. By this way, we successfully fabricated the DWS mc-Si solar cell (15.6 cm × 15.6 cm) with the highest conversion efficiency of 19.07%, showing an improvement in efficiency of 0.6% compared to a DWS mc-Si solar cell (15.6 cm × 15.6 cm) prepared by conventional acidic texturization.