Coupled oscillations of VO2-based layered structures: Experiment and simulation approach
Coupled oscillations of VO2-based layered structures: Experiment and simulation approach
复制标题
VO2 层状结构的耦合振荡：实验和模拟方法
DOI：
10.1063/5.0001382
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发表时间：
2020
影响因子：
3.2
通讯作者：
K. Okimura
中科院分区：
文献类型：
--
作者：
R. Tobe;Md. Suruz Mian;K. Okimura
通过感应耦合等离子体 (ICP) 辅助射频反应溅射，将二氧化钒 (VO2) 薄膜沉积在玻璃上的导电氧化铟锡 (ITO) 层上。 VO2 薄膜表现出绝缘体-金属转变 (IMT)，在 78°C 左右电阻发生三个数量级的变化。两个基于 VO2 的分层结构 (LS) 进行电容耦合，通过调整串联电阻和供电电压，产生高达 1MHz 的自持振荡。此外，我们观察到弱耦合模式、混沌耦合模式和强耦合模式。我们的实验结果得到了理论电路模拟的证实，理论电路模拟成功地重建了耦合振荡现象并阐明了实现同步模式的机制。这些结果将有助于基于 VO2 的耦合振荡器的物理和工程应用。
Vanadium dioxide (VO2) film was deposited on a conductive indium-tin-oxide (ITO) layer on glass by inductively-coupled-plasma (ICP)-assisted rf reactive sputtering. The VO2 film showed insulator–metal transition (IMT) with three orders of magnitude resistance change at around 78 °C. Two VO2-based layered structures (LSs) are capacitively coupled resulting in emerging self-sustaining oscillations up to 1 MHz by adjusting the series resistance and the supplied voltage. Furthermore, we observe weak, chaotic, and strong coupling modes. Our experimental results are corroborated by theoretical circuit simulations that successfully reconstruct the coupled-oscillation phenomena and clarify the mechanisms responsible for the realized synchronization modes. These results will contribute to the physics and engineering application of VO2-based coupled oscillators.