TBAL: Tunnel FET-Based Adiabatic Logic for Energy-Efficient, Ultra-Low Voltage IoT Applications
TBAL: Tunnel FET-Based Adiabatic Logic for Energy-Efficient, Ultra-Low Voltage IoT Applications
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DOI：
10.1109/jeds.2019.2891204
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发表时间：
2019-01-01
影响因子：
2.3
通讯作者：
Hudait, Mantu K.
中科院分区：
文献类型：
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作者：
Liu, Jheng-Sin;Clavel, Michael B.;Hudait, Mantu K.
提出了一种新的基于隧道场效应晶体管(TFET)的绝热逻辑(TBAL)电路拓扑结构，并对几种器件结构(平面MOSFET、FinFET和TFET)和AL实现(高效电荷恢复逻辑，2N-2N2P，正反馈绝热逻辑)在超低电压(0.3V&>=V-DD)下进行了评估和基准测试
A novel, tunnel field-effect transistor (TFET)-based adiabatic logic (TBAL) circuit topology has been proposed, evaluated and benchmarked with several device architectures (planar MOSFET, FinFET, and TFET) and AL implementations (efficient charge recovery logic, 2N-2N2P, positive feedback adiabatic logic) operating in the ultra-low voltage (0.3 V >= V-DD