New Yb3+-doped Gd2GeO5 crystal growth and optical characterization

New Yb3+-doped Gd2GeO5 crystal growth and optical characterization
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新型 Yb3 掺杂 Gd2GeO5 晶体生长和光学表征

DOI:
10.1088/1612-2011/10/10/105811
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发表时间:
2013-10
影响因子:
1.7
通讯作者:
Shaotang Yin
Shaotang Yin
中科院分区:
物理与天体物理4区
文献类型:
--
作者:
Kaijie Ning;Qingli Zhang;Dunlu Sun;Lihua Ding;Ying Hang;Shaotang Yin

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本文首次用CZ法生长出了一种新的Yb3+掺杂Gd2GeO5 (Yb3+:GGO)晶体。对晶体结构进行了细化,并对折射率进行了估计。对Yb3+:GGO晶体的吸收光谱、发射光谱和Stark能级图进行了分析和研究。对Yb3+:GGO晶体的潜在激光性能评价表明,Yb3+:GGO晶体是一种很有前途的Yb3+激光材料,可用于开发二极管泵浦可调谐或超快激光器。
A new Yb3+-doped Gd2GeO5 (Yb3+:GGO) crystal was grown by the Czochralski (CZ) technique for the first time to our knowledge. The crystal structure was refined and the refractive index was estimated. The absorption and emission spectra and the Stark energy level diagrams for the Yb3+:GGO crystal were analyzed and investigated. Evaluation of the potential laser performance shows that Yb3+:GGO crystal is a promising Yb3+ laser material for developing diode-pumped tunable or ultrafast lasers.
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