Tunneling magnetoresistance in Co-ZrO2 granular thin films
Tunneling magnetoresistance in Co-ZrO2 granular thin films
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DOI:
10.1103/physrevb.73.045418
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发表时间:
2006-01
影响因子:
3.7
通讯作者:
B. Hattink;M. G. D. Muro;Z. Konstantinović;X. Batlle;A. Labarta;M. Varela
中科院分区:
文献类型:
--
作者:
B. Hattink;M. G. D. Muro;Z. Konstantinović;X. Batlle;A. Labarta;M. Varela
Granular films composed of well defined nanometric Co particles embedded in an insulating ${\mathrm{ZrO}}_{2}$ matrix were prepared by pulsed laser depositon in a wide range of Co volume concentrations $(0.15lxl0.43)$. High-resolution transmission electron microscopy (TEM) showed very sharp interfaces between the crystalline particles and the amorphous matrix. Narrow particle size distributions were determined from TEM and by fitting the low-field magnetic susceptibility and isothermal magnetization in the paramagnetic regime to a distribution of Langevin functions. The magnetic particle size varies little for Co volume concentrations $xl0.32$ and increases as the percolation limit is approached. The tunneling magnetoresistance (TMR) was successfully reproduced using the Inoue-Maekawa model. The maximum value of TMR was temperature-independent within 50\char21{}300 K, and largely increased at low $T$, suggesting the occurrence of higher-order tunneling processes. Consequently, the tunneling conductance and TMR in clean granular metals are dominated by the Coulomb gap and the inherent particle size distribution.