Syntheses and growth mechanisms of 3C-SiC nanostructures from carbon and silicon powders.
Syntheses and growth mechanisms of 3C-SiC nanostructures from carbon and silicon powders.
复制标题
DOI：
10.1166/jnn.2009.1323
复制
发表时间：
2009-11
影响因子：
--
通讯作者：
J. Zhu;X. Xiong;H. T. Chen;X. Wu;W. Zhang;P. Chu
中科院分区：
文献类型：
--
作者：
J. Zhu;X. Xiong;H. T. Chen;X. Wu;W. Zhang;P. Chu
以活性碳和硅粉为原料，在1250℃常压下大规模合成了针状和Y型纳米晶须、光滑的塔状纳米棒等立方体碳化硅(3C-SiC)纳米结构。使用球磨硅粉会形成纳米线和纳米晶须，而未球磨的硅粉会与未反应的硅粉一起形成纳米棒。生长室中的剩余氧气启动渗碳反应，无需进一步消耗氧气即可进行。观察到所合成的3C-SiC纳米结构的尺寸和形貌与起始硅颗粒的尺寸和形貌有关。提出了氧辅助气固模型来解释观察到的纳米结构。
Cubic silicon carbide (3C-SiC) nanostructures such as needle- and Y-shaped nanowhiskers, smooth and pagoda-shaped nanorods are synthesized on a large scale from activated carbon and silicon powders at 1250 degrees C under atmospheric pressure. The use of ball-milled silicon powders results in the formation of nanowires and nanowhiskers, whereas non-milled silicon powders lead to nanorods together with unreacted silicon powders. Residual oxygen in the growth chamber initiates the carburization reactions which can proceed without further oxygen consumption. The size and morphology of the as-synthesized 3C-SiC nanostructures are observed to be related to the size and morphology of the starting silicon particles. An oxygen-assisted gas-solid model is proposed to explain the observed nanostructures.