Improvements of electronic and optical characteristics of n-GaN-based structures by photoelectrochemical oxidation in glycol solution
Improvements of electronic and optical characteristics of n-GaN-based structures by photoelectrochemical oxidation in glycol solution
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DOI：
10.1063/1.3079502
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发表时间：
2009-03
影响因子：
3.2
通讯作者：
Nanako Shiozaki;T. Hashizume
中科院分区：
文献类型：
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作者：
Nanako Shiozaki;T. Hashizume
通过在乙二醇溶液中应用光电化学氧化方法对n-GaN进行表面控制，以改善光学和电子特性。研究了氧化的基本性质。通过X射线光电子能谱和微俄歇电子能谱分析了氧化、化学成分和键合态，证实了表面形成了氧化镓。在4 mW/cm2 的UV照射下，氧化物形成速率约为8 nm/min。在建立了控制n-GaN氧化的基本特性后，应用表面控制技术实现了AlGaN/GaN高电子迁移率晶体管线结构中的低损伤刻蚀、光致发光强度的增强以及暴露于空气的侧壁的选择性钝化。电容-电压测量显示GaN和阳极氧化物之间的最小界面态密度约为5×1011 cm−2 eV−1，这对于化合物半导体来说是相当低的值。
Surface control of n-GaN was performed by applying a photoelectrochemical oxidation method in a glycol solution to improve the optical and electronic characteristics. The fundamental properties of the oxidation were investigated. The oxidation, chemical composition, and bonding states were analyzed by x-ray photoelectron spectroscopy and micro-Auger electron spectroscopy, in which confirmed the formation of gallium oxide on the surface. The oxide formation rate was about 8 nm/min under UV illumination of 4 mW/cm2. After establishing the basic properties for control of n-GaN oxidation, the surface control technique was applied to achieve low-damage etching, enhancement of the photoluminescence intensity, and selective passivation of the air-exposed sidewalls in an AlGaN/GaN high electron mobility transistor wire structure. The capacitance-voltage measurement revealed the minimum interface-state density between GaN and anodic oxide to be about 5×1011 cm−2 eV−1, which is rather low value for compound semicon...