Electronic structures of the highest occupied molecular orbital bands of a pentacene ultrathin film
Electronic structures of the highest occupied molecular orbital bands of a pentacene ultrathin film
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DOI：
10.1103/physrevlett.98.247601
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发表时间：
2007-06-15
影响因子：
8.6
通讯作者：
Sakamoto, Kazuyuki
中科院分区：
文献类型：
--
作者：
Kakuta, Haruya;Hirahara, Toru;Sakamoto, Kazuyuki
我们报道了并五烯（Pn）薄膜的最高已占据分子轨道（HOMO）衍生带的能量色散，其面内结构与低密度体Pn相的ab面非常相似。我们目前的光发射结果表明，相邻Pn分子的π轨道重叠比理论计算所期望的要大。此外，在两个homo衍生的能带中，具有较高结合能的能带色散宽度大，表明这是Pn晶体中带状电荷输运的主要原因。
We report the energy dispersions of the highest occupied molecular orbitals (HOMO)-derived bands of a pentacene (Pn) thin film, whose in-plane structure resembles closely that of the ab plane of a low-density bulk Pn phase. Our present photoemission result indicates that the overlap of the pi-orbitals of adjacent Pn molecules is larger than what was expected from theoretical calculations. Further, of the two HOMO-derived bands, the large dispersion width of the band with higher binding energy suggests that this one mainly contributes to the bandlike charge transport in a Pn crystal.