Two-Dimensional Quantization Effect on Indirect Tunneling in an Insulated-Gate Lateral pn-Junction Structure with a Thin Silicon Layer
Two-Dimensional Quantization Effect on Indirect Tunneling in an Insulated-Gate Lateral pn-Junction Structure with a Thin Silicon Layer
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薄硅层绝缘栅横向pn结结构中间接隧道效应的二维量子化效应
DOI：
10.1143/jjap.39.1597
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发表时间：
2000
影响因子：
1.5
通讯作者：
Y. Omura
中科院分区：
文献类型：
--
作者：
Y. Omura
本文描述了一种具有10 nm厚硅层的绝缘层上硅绝缘栅pn结器件的低温多负电导特性。对横向低维隧道开挖过程的重要方面进行了理论分析。对硅层厚度为10 nm和90 nm的器件特性的比较表明，强的二维限制效应在多负电导中起着重要的作用。该理论预测，在具有10 nm厚的硅层的器件中，两个子带能级之间的“共振效应”导致了多个负电导。
In this paper, the multi-negative conductance property detected at low temperatures in a silicon-on-insulator insulated-gate pn-junction device with a 10-nm-thick silicon layer is described. Important aspects of lateral low-dimensional tunneling process are examined by a theoretical formulation. A comparison of the characteristics of devices with a 10-nm-thick or a 90-nm-thick silicon layer indicates that the strong two-dimensional confinement effect plays an important role in multi-negative conductance. The theory predicts that a “resonance effect” between two subband levels results in the multi-negative conductance in the device with the 10-nm-thick silicon layer.