Ultralow operation voltages of a transparent memristor based on bilayer ITO
Ultralow operation voltages of a transparent memristor based on bilayer ITO
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DOI：
10.1063/5.0008416
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发表时间：
2020-06
影响因子：
4
通讯作者：
Yuchen Wang;Lingxiang Hu;Xianhua Wei;F. Zhuge
中科院分区：
文献类型：
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作者：
Yuchen Wang;Lingxiang Hu;Xianhua Wei;F. Zhuge
传统的基于金属/绝缘体/金属夹层结构的忆阻器通常需要几伏的工作电压来在不同的电阻状态之间切换。在这项工作中，我们报道了一个简单的双层器件，分别为14 mV和0.3 V的超低设置和重置电压，该器件仅由广泛使用的氧化铟锡（ITO）组成。如此低的工作电压可能是由于电子束蒸发沉积的上层ITO疏松多孔结构、两层ITO之间的无定形界面以及引发过程引发的氧浓度梯度的形成协同作用所致。利用这种双层器件优越的电阻开关特性，通过施加超低电刺激实现突触功能和图像记忆。该原型器件不仅为简化器件结构和制造工艺铺平了道路，而且为开发低功耗的透明多功能器件提供了可能性。
Traditional memristors based on metal/insulator/metal sandwich structures generally require the operation voltages of several volts to switch the device between different resistance states. In this work, we report the ultralow set and reset voltages of 14 mV and 0.3 V in a simple bilayer device, respectively, which is composed of the widely used indium tin oxide (ITO) solely. Such low operation voltages might be ascribed to the synergistic effect of the loose porous structure in the upper ITO layer deposited by electron beam evaporation, the amorphous interface between two ITO layers, and the formation of an oxygen concentration gradient triggered by an initiation process. Based on the superior resistive switching properties of this kind bilayer device, synaptic functions and image memorization are achieved by applying ultralow electrical stimulus. The prototype device not only paves the way for simplifying the device structure and the fabrication process but also offers possibilities to develop transparent multifunctional devices with low power consumption.