Elimination of domain backswitching in BiFe0.95Mn0.05O3 thin films by lowering the layer thickness
Elimination of domain backswitching in BiFe0.95Mn0.05O3 thin films by lowering the layer thickness
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DOI：
10.1063/1.3698321
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发表时间：
2012-03
影响因子：
3.2
通讯作者：
Jingjing Liu;Zaimei Yin;Hongyan Zhang;Wen Sun;B. Jiang;G. Hu
中科院分区：
文献类型：
--
作者：
Jingjing Liu;Zaimei Yin;Hongyan Zhang;Wen Sun;B. Jiang;G. Hu
BiFe0.95Mn0.05O3 thin films with different layer thicknesses annealed at temperatures ranging from 500 to 600 °C were fabricated on indium tin oxide/glass substrates using a metal organic decomposition process. The ferroelectric hysteresis loops reveal that the remanent polarization (Pr) in the films of 42, 31, and 20 nm per layer can be improved dramatically by increasing the annealing temperature, while the Pr in the films of 25 nm/l shows weak dependence on the annealing temperature. For a given temperature, the Pr in the films of 25 nm/l is much larger than those in the films of 20, 31, and 42 nm/l, especially at temperatures below 575 °C. These phenomena can be ascribed to the lower content of defect complexes resulting from the columnar structure formed by decreasing layer thickness, which in turn results in the elimination of domain backswitching. The results also indicate that reducing the layer thickness moderately is an effective method for lowering the annealing temperature.
