Characterization of heterojunction diodes with hydride vapor phase epitaxy grown AlGaN on 4H–SiC
Characterization of heterojunction diodes with hydride vapor phase epitaxy grown AlGaN on 4H–SiC
复制标题
4H-SiC 上氢化物气相外延生长 AlGaN 异质结二极管的表征
DOI：
10.1063/1.1430892
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发表时间：
2002
影响因子：
3.2
通讯作者：
V. Dmitriev
中科院分区：
文献类型：
--
作者：
E. Danielsson;C. Zetterling;M. Östling;D. Tsvetkov;V. Dmitriev
制备了不同Al组分的AlGaN/4 H-SiC异质结二极管。研究了五种不同的组分，GaN、Al 0.1Ga 0.9N、Al 0.15Ga 0.85N、Al 0.3Ga 0.7N和Al 0.5Ga 0.5N，沿着4 H-SiC同质结二极管用于比较。开启电压约为1V，除了Al0.3Ga0.7N二极管之外，所有异质结二极管的理想因子在1和2之间。该二极管的理想因子在2和3之间，并且还显示出低得多的串联电阻，表明跨结的传输机制发生了变化。隧道辅助复合模型进行了分析和比较的GaN二极管的提取值。该模型与该二极管的电流-电压和电容-电压测量结果吻合良好。该模型不适用于其他样品，因为它们的特性不能用简单的机制来解释。
AlGaN/4H–SiC heterojunction diodes with varying composition of Al have been fabricated. Five different compositions were investigated, GaN, Al0.1Ga0.9N, Al0.15Ga0.85N, Al0.3Ga0.7N, and Al0.5Ga0.5N, along with a 4H–SiC homojunction diode for comparison. The turn on voltage was around 1 V, and the ideality factor between 1 and 2 for all heterojunction diodes except for the Al0.3Ga0.7N diode. This diode had an ideality factor between 2 and 3, and also showed a much lower series resistance, indicating a change in transport mechanism across the junction. A tunnel assisted recombination model was analyzed and compared to the extracted values of the GaN diode. The model agreed well with both current–voltage and capacitance–voltage measurements for this diode. This model was not applied to the other samples, since their characteristics could not be explained by a simple mechanism.