Nitride-based metal–insulator–semiconductor ultraviolet sensors with a sputtered lanthanum oxide (La2O3) insulator
Nitride-based metal–insulator–semiconductor ultraviolet sensors with a sputtered lanthanum oxide (La2O3) insulator
复制标题
具有溅射氧化镧 (La2O3) 绝缘体的氮化物金属-绝缘体-半导体紫外线传感器
DOI：
10.1016/j.surfcoat.2012.07.030
复制
发表时间：
2013
影响因子：
5.4
通讯作者：
San
中科院分区：
文献类型：
--
作者：
Po;Chin;Chia;Chung;San
本研究报告的制作GaN金属-绝缘体-半导体（MIS）紫外（UV）传感器与La 2 O3绝缘层。在5V偏压下，采用La 2 O3绝缘层的MIS传感器的漏电流可低至4.95 × 10 - 11 A.通过插入La 2 O3层，暗电流显著降低，紫外-可见光对比度提高。此外，La 2 O3绝缘层的使用大大降低了噪声等效功率，提高了探测率。
This study reports the fabrication of GaN metal–insulator–semiconductor (MIS) ultraviolet (UV) sensors with an La2O3insulating layer. With a 5 V applied bias, the leakage current of the fabricated MIS sensors with La2O3insulating layers may be low to 4.95 × 10− 11A. The dark current was substantially reduced, and the UV-to-visible contrast ratio was enhanced by inserting the La2O3layer. Furthermore, the noise equivalent power was substantially reduced, and detectivity was enhanced by using La2O3insulating layers.