Band structure engineering in organic semiconductors
Band structure engineering in organic semiconductors
复制标题
DOI：
10.1126/science.aaf0590
复制
发表时间：
2016-06-17
期刊：
影响因子：
56.9
通讯作者：
Leo, Karl
中科院分区：
文献类型：
--
作者：
Schwarze, Martin;Tress, Wolfgang;Leo, Karl
现代电子学的一个关键突破是引入了能带结构工程，通过合金化不同的半导体来设计几乎任意的电子势结构，以连续调整带隙和带边能量。这种方法在有机半导体中的实施受到这些材料中电子态的强烈局部化的阻碍。我们表明，迄今为止，在很大程度上被忽视的长程库仑相互作用的影响提供了一个解决方案。光电子能谱证实，结晶有机半导体的电离能可以在很宽的范围内连续调谐，通过混合它们与它们的卤代衍生物。相应地，有机太阳能电池的光伏带隙和开路电压可以通过这些给体的混合比例连续调节。
A key breakthrough in modern electronics was the introduction of band structure engineering, the design of almost arbitrary electronic potential structures by alloying different semiconductors to continuously tune the band gap and band-edge energies. Implementation of this approach in organic semiconductors has been hindered by strong localization of the electronic states in these materials. We show that the influence of so far largely ignored long-range Coulomb interactions provides a workaround. Photoelectron spectroscopy confirms that the ionization energies of crystalline organic semiconductors can be continuously tuned over a wide range by blending them with their halogenated derivatives. Correspondingly, the photovoltaic gap and open-circuit voltage of organic solar cells can be continuously tuned by the blending ratio of these donors.