DISORDER PRODUCED IN SiC BY ION BOMBARDMENT.
DISORDER PRODUCED IN SiC BY ION BOMBARDMENT.
复制标题
离子轰击在 SiC 中产生的无序。
DOI：
10.1080/00337577108231058
复制
发表时间：
1971
影响因子：
1
通讯作者：
O. Marsh
中科院分区：
文献类型：
--
作者：
R. R. Hart;H. Dunlap;O. Marsh
我们测量了40 keV Sb+和30 keV N+注入α-SiC后产生的残余晶格无序量。在23°C下并且为了避免沟道效应，在靶相对于离子束的预选的随机等效取向下进行双折射。的无序，定义为晶格原子的数量从晶格位置位移大于10.2A，确定通过背散射能量分析的280 keV的He++和140 keV的H+入射沿着的通道，并在一个随机的方向。无序的量随重离子（Sb+）的剂量线性增加至饱和状态，对应于在剂量为1014 Sb+/cm 2时形成非晶层。由轻离子（N+）产生的无序首先随着N+剂量的平方根而增加，但在1014 N+/cm ~ 2处随着剂量近似线性地增加，在1015 N+/cm ~ 2处达到饱和值。在Si中观察到这两种离子的类似行为。Si和C的位移原子数...
Abstract We have measured the amount of residual lattice disorder produced in α-Sic after implantation of 40-keV Sb+ and 30-keV N+. The implantations were performed at 23°C and, to avoid channeling effects, at a preselected random equivalent orientation of the target with respect to the ion beam. The disorder, defined as the number of lattice atoms displaced greater than ∼0.2A from lattice sites, was determined by backscattered energy analysis of 280-keV He++ and 140-keV H+ incident along the channel and in a random direction. The amount of disorder increased linearly with dose of the heavy ion (Sb+) to a saturation condition, corresponding to the formation of an amorphous layer at a dose of ∼1014 Sb+/cm2. The disorder produced by the light ion (N+) at first increased as the square root of N+ dose but at ∼1014 N+/cm2 increased approximately linearly with dose to a saturation value at ∼1015 N+/cm2. Similar behavior for these two ions has been observed in Si. The number of displaced atoms of Si and C...