Resistive switching of oxygen enhanced TiO2 thin-film devices
Resistive switching of oxygen enhanced TiO2 thin-film devices
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DOI：
10.1063/1.4774089
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发表时间：
2013-01-07
影响因子：
4
通讯作者：
Toumazou, Christofer
中科院分区：
文献类型：
--
作者：
Salaoru, Iulia;Prodromakis, Themistoklis;Toumazou, Christofer
在这项工作中，我们研究了氧增强的二氧化钛薄膜对铂/二氧化钛/铂纳米记忆器件开关动力学的影响。我们证明这种器件可以用作阻性随机存取存储器(RRAM)单元，而不需要电铸。实验表明，在Ar/O-2 6/6sccm和2/10sccm分压下溅射制备的二氧化钛薄膜器件分别显示出6个数量级和2个数量级的开关比。此外，研究还发现，在溅射二氧化钛的过程中，较低的氧气流量允许较低的能量需求来将器件从高阻状态切换到低阻状态。[http://dx.doi.org/10.1063/1.4774089]
In this work, we investigate the effect of oxygen-enhanced TiO2 thin films on the switching dynamics of Pt/TiO2/Pt memristive nanodevices. We demonstrate that such devices can be used as resistive random access memory (RRAM) cells without required electroforming. We experimentally demonstrate that devices based on TiO2 films fabricated via sputtering with partial pressures of Ar/O-2 6/6 sccm and 2/10 sccm show OFF/ON ratios of six and two orders of magnitude, respectively. Additionally, it was found that a lower O-2 flow during sputtering of TiO2 allows for lower energy requirements for switching the devices from a high to low resistive state. [http://dx.doi.org/10.1063/1.4774089]