Influence of copper foil polycrystalline structure on graphene anisotropic etching
Influence of copper foil polycrystalline structure on graphene anisotropic etching
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DOI：
10.1016/j.apsusc.2016.10.018
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发表时间：
2017-01-30
影响因子：
6.7
通讯作者：
Tanemura, Masaki
中科院分区：
文献类型：
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作者：
Sharma, Kamal P.;Mahyavanshi, Rakesh D.;Tanemura, Masaki
石墨烯和其他二维材料的各向异性蚀刻是理解生长过程以及能够制造各种明确定义的结构的重要工具。在这里，我们揭示了铜箔多晶结构的影响，各向异性蚀刻过程中合成的石墨烯。采用低压化学气相沉积（LPCVD）法在多晶铜箔上制备了石墨烯晶体。微观分析表明，在相邻Cu晶粒的闭合附近具有不同成核的石墨烯晶体的形状、尺寸和条纹排列的差异。这种石墨烯晶体的生长后蚀刻也显著地受到Cu晶粒的晶体学性质的影响，如通过场发射扫描电子显微镜（FE-SEM）和电子背散射衍射（EBSD）分析所观察到的。观察到具有各向异性蚀刻的Hiscononal孔形成与合成石墨烯中的条纹和褶皱无关。我们还观察到石墨烯的蚀刻图案取决于基础Cu晶粒取向的变化，这归因于成核和生长过程的差异。这一发现有助于理解金属催化剂晶体结构对微观腐蚀图形的影响。(C)2016爱思唯尔B. V.保留所有权利。
Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern Of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal catalyst crystallographic structure. (C) 2016 Elsevier B.V. All rights reserved.