Temporal Stability of Y–Ba–Cu–O Nano Josephson Junctions from Ion Irradiation
Temporal Stability of Y–Ba–Cu–O Nano Josephson Junctions from Ion Irradiation
复制标题
离子辐照下 Y-Ba-Cu-O 纳米约瑟夫森结的时间稳定性
DOI：
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发表时间：
2013
影响因子：
1.8
通讯作者：
R. Dynes
中科院分区：
文献类型：
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作者：
S. Cybart;P. Roediger;Ke Chen;J. Parker;E. Cho;T. Wong;R. Dynes
我们研究了通过电子束光刻和反应离子刻蚀制备的纳米级注入掩模进行离子辐照产生的YBa 2Cu 3 O 7-δ约瑟夫森结的时间稳定性。对制造后和室温下储存八年后测量的结的电流-电压特性进行比较，显示临界电流略有下降，正常状态电阻增加，这与缺陷扩散导致的薄弱环节加宽一致。制造八年后进行的Shapiro步骤测量显示，保持了器件的均匀性，并且有力地证明了这些器件具有优异的应用时间稳定性。
We investigate the temporal stability of YBa2Cu3 O7-δ Josephson junctions created by ion irradiation through a nanoscale implant mask fabricated using electron beam lithography and reactive ion etching. A comparison of current-voltage characteristics measured for junctions after fabrication and eight years of storage at room temperature show a slight decrease in critical current and increase in normal state resistance consistent with broadening of the weak link from diffusion of defects. Shapiro step measurements performed eight years after fabrication reveal that device uniformity is maintained and is strong evidence that these devices have excellent temporal stability for applications.