Monolithic Integration of an Active InSb-Based Mid-Infrared Photopixel With a GaAs MESFET
Monolithic Integration of an Active InSb-Based Mid-Infrared Photopixel With a GaAs MESFET
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有源 InSb 基中红外光电像素与 GaAs MESFET 的单片集成
DOI：
10.1109/ted.2015.2492823
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发表时间：
2015
影响因子：
3.1
通讯作者：
D. Cumming
中科院分区：
文献类型：
--
作者：
Chengzhi Xie;V. Pusino;A. Khalid;M. Steer;M. Sorel;I. Thayne;D. Cumming
中波长红外(MWIR)探测器在国防、安全、商业和环境等领域的应用日益重要。增强的集成将导致更高的分辨率和更低的成本焦平面阵列(FPA)。我们介绍了在适合于大规模集成到FPA中的GaAs衬底上InSb制造的有源光素的单片制作。像素寻址是通过将GaAs MESFET与InSb光电二极管(PD)共集成来提供的。像素制造是通过开发新的材料和工艺步骤来实现的，包括隔离刻蚀、栅凹式刻蚀和低温工艺，以实现与GaAs和InSb器件的欧姆接触。傅立叶变换红外光谱中详细的电学和光学测量表明，在室温下，PD对3-5μm的辐射很敏感，并且使用集成的MESFET可以将器件与其触点隔离。这种不同种类的技术创造了巨大的潜力，可以实现一种新型的可寻址像素的单片式FPA，用于在MWIR范围内成像。
Medium wavelength infrared (MWIR) detectors are of increasing importance in defense, security, commercial, and environmental applications. Enhanced integration will lead to greater resolution and lower cost focal plane arrays (FPAs). We present the monolithic fabrication of an active photopixel made in InSb on a GaAs substrate that is suitable for large-scale integration into an FPA. Pixel addressing is provided by the cointegration of a GaAs MESFET with an InSb photodiode (PD). Pixel fabrication was achieved by developing novel materials and process steps, including isolation etches, a gate recess etch, and low temperature processes, to make Ohmic contacts to both the GaAs and InSb devices. Detailed electrical and optical measurements in an FTIR demonstrated that the PD was sensitive to radiation in the range of 3-5 μm at room temperature, and that the device could be isolated from its contacts using the integrated MESFET. This heterogeneous technology creates great potential to realize a new type of monolithic FPA of addressable pixels for imaging in the MWIR range.
影响因子：
3.1
作者：
Hsiu-Yu Cheng;B. Choubey;S. Collins
通讯作者：
Hsiu-Yu Cheng;B. Choubey;S. Collins