Large Hall signal due to electrical switching of an antiferromagnetic Weyl semimetal state
Large Hall signal due to electrical switching of an antiferromagnetic Weyl semimetal state
复制标题
由于反铁磁韦尔半金属态的电切换而产生的大霍尔信号
DOI：
10.1002/smsc.202000025
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
and S. Nakatsuji
中科院分区：
文献类型：
--
作者：
H. Tsai;T. Higo;K. Kondou;S. Sakamoto;A. Kobayashi;T. Matsuo;S. Miwa;Y. Otani;and S. Nakatsuji
开发一种电操纵Weyl半金属态的技术是设计具有拓扑鲁棒性的非易失性存储器的关键一步。最近，这种操纵是第一次在反铁磁Weyl半金属Mn 3Sn中实现的，使用Mn 3Sn/重金属（Pt，W）异质结构中的异常霍尔效应的读出信号。这里，据报道，霍尔信号的切换可以通过1）去除Ru的缓冲层以调整Mn 3Sn的晶体取向，以及2）在沉积重金属之后退火以改变界面条件来显著增强。在Mn 3Sn/W样品中，霍尔电阻的切换为0.35 Ω，这比先前使用Ru/Mn 3Sn/Pt异质结构报道的值大一个数量级。此外，通过增加读取电流，发现读出电压可能远远超过1 mV，这是存储器技术未来应用的里程碑。
Developing a technology to electrically manipulate a Weyl semimetal state is a vital step for designing a nonvolatile memory using topologically robust properties. Recently, such manipulation is realized for the first time in the antiferromagnetic Weyl semimetal Mn3Sn using the readout signal of anomalous Hall effect in the Mn3Sn/heavy metal (Pt, W) heterostructures. Here, it is reported that the switching of Hall signal can be significantly enhanced by 1) removing the buffer layer of Ru to adjust the crystal orientation of Mn3Sn, and 2) annealing after deposition of the heavy metal to change the interfacial condition. The switching of the Hall resistance is 0.35 Ω in the Mn3Sn/W sample, which becomes one order of magnitude larger than the previously reported value using Ru/Mn3Sn/Pt heterostructures. Moreover, by increasing the read current, it is found that the readout voltage may go well beyond 1 mV, a milestone for future applications in memory technology.