Electronic Structure of Refractory Carbides and Nitrides
Electronic Structure of Refractory Carbides and Nitrides
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DOI：
10.1017/cbo9780511629037.009
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发表时间：
1994-02
期刊：
影响因子：
--
通讯作者：
V. Gubanov;A. L. Ivanovsky;V. Zhukov
中科院分区：
文献类型：
--
作者：
V. Gubanov;A. L. Ivanovsky;V. Zhukov
1. 计算难熔化合物电子结构和性质的理论方法2。二元碳化物的电子结构、化学键和性能过渡金属氮化物的电子结构与原子间相互作用非化学计量碳化物和氮化物的电子结构和性质碳化物、氮化物及其固溶体中的S、p元素杂质含氢碳化物和氮化物及其固溶体金属亚晶格掺杂对碳化物和氮化物电子性能的影响碳化物和氮化物表面的电子结构。
1. Theoretical methods used to calculate the electronic structure and properties of refractory compounds 2. Electronic structure, chemical bonding and properties of binary carbides 3. Electronic structure and interatomic interactions in transition-metal nitrides 4. Electronic structure and properties of nonstoichiometric carbides and nitrides 5. S-, P-element impurities in carbides, nitrides, and their solid solutions 6. Hydrogen-containing carbides and nitrides and their solid solutions 7. Influence of metal sublattice doping on electronic properties of carbides and nitrides 8. Electronic structure of carbides and nitrides surface.