(Pb1−xLax)(Zr1−yTiy)O3 patterns on Pt-coated silicon prepared by pulsed laser deposition process
(Pb1−xLax)(Zr1−yTiy)O3 patterns on Pt-coated silicon prepared by pulsed laser deposition process
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通过脉冲激光沉积工艺在 Pt 涂层硅上制备 (Pb1−xLax)(Zr1−yTiy)O3 图案
DOI：
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发表时间：
1999
期刊：
影响因子：
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通讯作者：
I. Lin
中科院分区：
文献类型：
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作者：
Kuo;Yu;Gwo Jamn;I. Lin
采用低温脉冲激光沉积（PLD）和高温快速热退火（RTA）两步法在Pt（Si）衬底上制备了（PbxLa 1 −x）（ZryTi 1 −y）O3（PLZT）铁电薄膜。纯钙钛矿PLZT相可以通过在550 °C（1-60 s）下的RTA获得，条件是结晶SrRuO 3层用作Pt（Si）衬底顶部上的缓冲层。 有效地抑制了层之间的相互扩散。增加RTA时间对PLZT/SRO/Pt（Si）薄膜的晶体结构和微结构没有明显的影响，但显著提高了薄膜的铁电性能和漏电特性。针对550 °C（30 s）下的薄膜RTA进行优化的电气性能为Pr=19 μC/cm 2，EC=70 kV/cm，并且对于Ea<450kV/cm施加场，JL<10 - 5A/cm 2。 在此基础上，研制出了具有良好铁电性能（Pr=14 μC/cm ~ 2，Ec=80 kV/cm）的PLZT点自对准图形。
Ferroelectric (PbxLa1−x)(ZryTi1−y)O3 (PLZT) thin films on Pt(Si) substrates have been synthesized using a two-step process, which includes low temperature pulsed laser deposition (PLD) and high temperature rapid thermal annealing (RTA). Pure perovskite PLZT phase can be achieved by RTA at 550 °C (1–60 s), provided that the crystalline SrRuO3 layer is used as buffer layer on top of Pt(Si) substrates. Interdiffusion between layers is efficiently suppressed. Increasing the RTA duration insignificantly modifies the crystalline structure and the microstructure of the PLZT/SRO/Pt(Si) films, but significantly improves the ferroelectric properties and leakage characteristics of the films. The electrical properties, which are optimized for the films RTA at 550 °C (30 s), are Pr=19 μC/cm2, Ec=70 kV/cm, and JL<10−5 A/cm2 for Ea<450 kV/cm applied field. A self-aligned pattern consisting of crystalline PLZT dots with good ferroelectric properties (Pr=14 μC/cm2, Ec=80 kV/cm) has been demonstrated.