Dark-field optical fault inspection of ~10 nm scale room-temperature silicon single-electron transistors
Dark-field optical fault inspection of ~10 nm scale room-temperature silicon single-electron transistors
复制标题
~10 nm 级室温硅单电子晶体管的暗场光学故障检查
DOI：
10.1088/1361-6528/acfb10
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发表时间：
2023
期刊：
影响因子：
3.5
通讯作者：
He W
中科院分区：
文献类型：
--
作者：
He W
暗场光学显微镜与基于模式衍射理论的横向电偏振白光光学模拟相结合，为纳米级刻蚀器件结构提供了非侵入性、亚波长的几何信息。研究了使用刻蚀∼10 nm点接触(PC)和面内侧栅定义的硅中的室温(RT)单电子晶体管(SET)，以实现制造故障检测。使用扫描电子显微镜、明视场(BF)和DF成像对器件进行检查。与BF相比，DF成像将边缘绕射的对比度提高了×3.5。RT SET结构中的亚波长特征导致DF强度图案中的衍射峰，从而为器件几何形状创建特征。利用DF线扫描光学模拟实验结果对这些特性进行了研究。将暗场成像和模拟应用于三种类型的结构，包括成功制造的、过腐蚀和互连的PC/GATE器件。每种结构都可以通过DF签名进行识别，从而提供了一种非侵入性的故障检测方法来研究刻蚀纳米器件的形态。
Dark-field (DF) optical microscopy, combined with optical simulation based on modal diffraction theory for transverse electric polarized white light, is shown to provide non-invasive, sub-wavelength geometrical information for nanoscale etched device structures. Room temperature (RT) single electron transistors (SETs) in silicon, defined using etched∼ 10 nm point-contacts (PCs) and in-plane side gates, are investigated to enable fabrication fault detection. Devices are inspected using scanning electron microscopy, bright-field (BF) and DF imaging. Compared to BF, DF imaging enhances contrast from edge diffraction by× 3.5. Sub-wavelength features in the RT SET structure lead to diffraction peaks in the DF intensity patterns, creating signatures for device geometry. These features are investigated using a DF line scan optical simulation approximation of the experimental results. Dark field imaging and simulation are applied to three types of structures, comprising successfully-fabricated, over-etched and interconnected PC/gate devices. Each structure can be identified via DF signatures, providing a non-invasive fault detection method to investigate etched nanodevice morphology.