Surface Structure of InAs (001) Treated with (NH4)2Sx Solution
Surface Structure of InAs (001) Treated with (NH4)2Sx Solution
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(NH4)2Sx溶液处理InAs(001)的表面结构
DOI：
10.1143/jjap.30.l786
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发表时间：
1991
影响因子：
1.5
通讯作者：
M. Oshima
中科院分区：
文献类型：
--
作者：
M. Katayama;M. Aono;H. Oigawa;Y. Nannichi;H. Sugahara;M. Oshima
用同轴碰撞离子散射谱（CAICISS）和低能电子衍射（LEED）研究了（NH4）2Sx处理的InAs（001）的表面结构。这些观察结果表明，在最外层表面的砷原子部分被硫原子取代。值得注意的是，经过380°C热处理的（NH4）2Sx处理表面的（2×1）重建通过形成沿[11 ￣ 0]方向排列的二聚体来描述。同步辐射光电子能谱（SRPES）获得的数据支持这种表面模型。
The surface structure of (NH4)2Sx-treated InAs (001) was studied by means of coaxial impact collision ion scattering spectroscopy (CAICISS) and low-energy electron diffraction (LEED). These observations revealed that arsenic atoms at the outermost surface are partially replaced by sulfur atoms. Significantly, the (2×1) reconstruction of the (NH4)2Sx-treated surface with heat treatment at 380°C is described by the formation of dimers lined up in [11̄0] direction. This surface model is supported by the data obtained by synchrotron radiation photoemission spectroscopy (SRPES).