Nanoscale memristive radiofrequency switches
Nanoscale memristive radiofrequency switches
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DOI：
10.1038/ncomms8519
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发表时间：
2015-06-01
影响因子：
16.6
通讯作者：
Xia, Qiangfei
中科院分区：
文献类型：
--
作者：
Pi, Shuang;Ghadiri-Sadrabadi, Mohammad;Xia, Qiangfei
无线开关是无线通信系统和消费电子产品中的关键部件。新兴的设备包括基于微机电系统和相变材料的开关。然而，这些器件具有诸如大的物理尺寸和高致动电压的缺点。在这里，我们提出并证明了纳米射频开关的基础上忆阻器件。该器件可以用低至0.4V的电压进行编程，并且具有高达10（12）的导通/截止电导比，具有长的状态保持。我们测量的开关的射频性能高达110 GHz，并表现出低插入损耗（0.3 dB，40 GHz），高隔离度（30 dB，40 GHz），平均截止频率为35太赫兹和竞争力的线性度和功率处理能力。我们的研究结果表明，除了它们在存储器和计算中的应用外，忆阻器件也是射频开关应用的主要竞争者。
Radiofrequency switches are critical components in wireless communication systems and consumer electronics. Emerging devices include switches based on microelectromechanical systems and phase-change materials. However, these devices suffer from disadvantages such as large physical dimensions and high actuation voltages. Here we propose and demonstrate a nanoscale radiofrequency switch based on a memristive device. The device can be programmed with a voltage as low as 0.4V and has an ON/OFF conductance ratio up to 10(12) with long state retention. We measure the radiofrequency performance of the switch up to 110 GHz and demonstrate low insertion loss (0.3 dB at 40 GHz), high isolation (30 dB at 40 GHz), an average cutoff frequency of 35 THz and competitive linearity and power-handling capability. Our results suggest that, in addition to their application in memory and computing, memristive devices are also a leading contender for radiofrequency switch applications.