Large area InAlAs/InGaAs metal semiconductor metal photodiode with very low dark current and its frequency response
Large area InAlAs/InGaAs metal semiconductor metal photodiode with very low dark current and its frequency response
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DOI：
10.1023/a:1018589903010
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发表时间：
1997-10
影响因子：
3
通讯作者：
J. Kim;M. Kim;S. Kim;W. Hwang;D. Miller;M. B. Das;J. Rios;L. Lunardi
中科院分区：
文献类型：
--
作者：
J. Kim;M. Kim;S. Kim;W. Hwang;D. Miller;M. B. Das;J. Rios;L. Lunardi
